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Schottky defect in a crystal arises due ...

Schottky defect in a crystal arises due to

A

Creation of equal number of cation and anion vacancies

B

Creation of unequal number of cation and anion vacancies

C

Migration of cations to interstitial voids

D

Migration of anions to interstitial voids

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The correct Answer is:
A
In schottky defect equal number of cations and anions leave the crystal lattice to form equal number of cationic and anionic vacancies.
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The number of Schottky defects (n) present in an ionic compound containing N ions at temperature T is given by n = Ne^(-E//2KT) , where E is the energy required to create n Schottky defects and K is the Boltzmann constant, If the mole fraction of Schottky defect in NaCl crystal at 2900 K is X , then calculate -ln(x) , Given: DeltaH of Schottky defect = 2 eV and K = 1.38 xx 10^(-23) J K^(-1) 1 eV = 1.608 xx 10^(-19) J

Schottky defect to crystals is observed when

A : In Schottky defect, density of crystal decreases. R : Equal number of cations and anions are missing in Schottky defect.

Schottky defect is found in

ERRORLESS-SOLID STATE-NCERT BASED QUESTIONS (DEFECTS IN CRYSTAL)
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  2. With Which one of the following elements silicon should be doped so as...

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  3. Schottky defect occurs mainly in electrovalent compounds where

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  4. Zine oxide is white but it turns yellow on heating . Explain.

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  5. Frenkel defect generally appears in

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  6. The following is not a function of an impurity present in a crystal:

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  7. Point defects are present in .

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  8. If a non-metal is added to the interstitial sites of a metal, then the...

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  9. In AgBr crystal , the ion size lies in the order Ag^(+) lt lt Br^(-) T...

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  10. Which one of the following is the most correct statement?

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  11. The flame colours of metal ions are due to

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  12. Which one of the following crystal does not exhibit Frenkel defect?

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  13. Which of the following defect is seen in FeO

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  14. To get a n- type semiconductor from silicon , it should be doped...

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  15. which kind of defects are introduced by doping ?

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  16. silicon doped with electron rich impurity forms ………. .

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  17. Pure silicon dopend with phosphorus is a

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  18. Te defect that is more likely to occur in almost all types of ionic cr...

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  19. Schottky defect in a crystal arises due to

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  20. The wrong statement about the interstitial compound is

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