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The dominant mechanisms for motion of ch...

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

A

Drift in forward bias, diffusion in reverse bias

B

Diffusion In forward bias, drift in reverse bias

C

Diffusion in both forward and reverse bias

D

Drift in both forward and reverse bias

Text Solution

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The correct Answer is:
B
In forward biasing, current diffuses because charge carrier flow due to concentration gradient . In reverse biasing current drifts because charge carrier flow due to electric field .
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