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A p-n junction has acceptor impurity con...

A p-n junction has acceptor impurity concentration of `10^(17) cm^(-3)` in the p-side and donor impurity concentration of `10^(16)cm^(-3)` in the n-side. What is the contact potential at the junction? (kT=thermal energy , instrinsic carrier concentration `n_(i)=1.6xx10^(10) cm^(-3)`

A

`(KT//e)ln(5xx10^(12))`

B

`(KT//e)ln(2.5xx10^(23))`

C

`(KT//e)ln(10^(23))`

D

`(KT//e)ln(10^(9))`

Text Solution

Verified by Experts

The correct Answer is:
A
Contact potential `(V_(0))=(KT)/(en)ln ((N_(A)N_(D))/(n_(i)^(2)))`
`impliesV_(0)=(KT)/(e)ln[(10^(17)xx10^(16))/((1.4xx10^(10))^(2))]`
`impliesV_(0)=(KT)/(e)ln(5xx10^(12))`
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