Home
Class 12
PHYSICS
Mobility of electrons in a semiconductor...

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconuctor, the density of electrons is `10^(19)m^(-3)` and their mobility is `1.6m^(2)//(V.s)` then the resistivity of te semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to :

A

`4Omegam`

B

`0.4Omegam`

C

`0.2Omegam`

D

`2Omegam`

Text Solution

Verified by Experts

The correct Answer is:
B

`sigma="ne"mu`
`rho=1/("ne"mu)=1/(10^(19)xx1.6xx10^(-19)xx1.6)=1/(2.56)~~0.4Omegam`
Promotional Banner

Similar Questions

Explore conceptually related problems

A potential difference of 4.5 V is applied across a conductor of length 0.1 m. If the drift velocity of electrons is 1.5 xx10^(-4)ms^(-1) , find the electrons mobility.

A potential difference of 5V is applied across a conductor of length 10 cm. IF drift of electron is 2.5 xx 10^(4) m//s , then electron mobility is SI unit is

When 5 V potential difference is applied across a wire of length 0.1 m, the drift speed of electrons is 2.5 xx 10^(-4) ms ^(-1) . If the electron density in the wire is 8 xx 10^(28) m^(-3) , the resistivity of the material is close to :

What is the drift velocity for the electrons in a calculator when an electric field of strength 200 V//m is applied on it and mobility of electrons is 4.5xx10^(-6) m^(2) V^(-1) s^(-1) ?

The drift velocity of the electrons in a copper wire of length 2 m under the application of a potential difference of 220V is 0.5ms^-1 . Their mobility ( in m^2v^-1s^-1 )

Give the ratio of number of holes and the number of conduction electrons in a (i) pure semiconnductor (ii) n-type semiconductor and (iii) p-type semiconductor.