A p-n photo-diode is made of a semiconductor material with a band gap of 2.8 V. Is it...

A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?