Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration

Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that n_(i)=1.5xx10^(16)m^(-3) .

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

A semiconductor crystal has equal electron and hole concentration of 9xx10^(8) m^(-3) it is doped by indium so that the hole concentration increases to 4.5 xx10^(12) m^(-3) calculate the new concentration of free electrons in the doped crystal nad also mention its type

A specimen of silicon is to be made p-type semiconductor. For this one atom of indium, on an average is doped in 5xx10^(7) silicon atoms. If the number density of silicon is 5xx10^(28) "atoms"//m^(3) , then the number of acceptor atoms per cm^(3) is

Predict effect on the electrical properties of a silicon crystal at room temperature if every millionth silver atom is replased by an atom of indium. Given, concentration of silicon atoms =5xx10^(28) m^(-3) , Intrinsic carrier concentration =1.5xx10^(16) m^(-3), mue=0.135 m^(2)//Vs and mu_(h)=0.048m^(2)//Vs .

The rate constant of a reaction is 5xx10^(-8) mole litre^(-1)sec^(-1) .How long it would take to change concentration for 4xx10^(-2) M to 2xx10^(-2) M ?

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is