Home
Class 12
PHYSICS
Determine the number density of donor at...

Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity `5Omega^(-1)cm^(-1)`, given that the mobility of electron in n-type germanium is `3900 cm^(2)V^(-1)s^(-1)`. Neglect the contribution of holes to conductivity.

Promotional Banner

Similar Questions

Explore conceptually related problems

Determine the number of density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an N-type semi-conductor of conductivity 6.4 Omega cm^(-1) . Given that mobility of electron in N-type Ge is 4000 cm^(2)//Vs . Neglect the contribution of holes. to conductivity.

The number desnity of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5 ohm^(-1) cm^(-1) is axx10^(15)cm^(-3) . Given that the mobility of electron in n-type Ge is 3900 cm^(2)//Vs , Neglect the contribution of holes to conductivity. What is the integer value of a?

Determine the number density of donor atoms which have to be added to an intrinsic germanium to produce an n -type semiconductor of conductity 0.06Sm^(-1) . Given the mobility of electrons =0.39m^(2)V^(-1)s^(-1) . Neglect the contribution of holes to the conductivity.

What amount of inpurity of atomic density in added toform N-type semiconductor in Ge semiconductor of conductivity sigma is 5Omega^(-1)cm^(-1) Mobility of electron in N-type semiconductor is 3900 cm^(2)V^(-1)s^(-1) . Ignore conductivity due to hole. (e=1.6xx10^(-19)C)

The impurity atom which when added to germanium makes its an n- type semiconductor is

An n type semiconductor of conductivity 6 Ω^(-1) cm^(-1) is produced when donor atoms are added to an intrinsic germanisum crystal ignoring the contributio of holes to conductivity and taking mobility of electron in n type Ge equal to 3500 cm^(2) /Vs determine the number density of donor atoms used for doping

A semiconductor is made extrinsic by adding trivalent impurity. The resulting p-type semiconductor should be of conductivity 12 mho m^(-1) . Mobility of holes is 400 cm^(2)V^(-1)s^(-1) . Neglecting electron contribution find the number density of accetor atoms. charge on an electron = 1.6xx10^(-19) C .