The electron mobility in `N`-type germanium is `3900cm^(2)//v-s` and its conductivity is `6.24 mho//cm`, then impurity concentration will be if the effect of cotters is negligible

Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

Mobility of electrons in n -type Ge is 5000 cm^2V^-1 s^-1 and conductivity 5 mho/cm. If effect of holes is negligible, then impurity concentration is k xx 10^(15) / cm^3 . Find k .

Mobility of electrons in germanium of n -type and their conductivity are 3900 cm^-2 V^-1 s^-1 and 5 mho/cm , respectively. If effect of holes is negligible, then the concentration of impurity is n xx 10^(15) . Find n .

On doping germanium with donor atoms of density 10^(17) cm^(-3) , find its conductivity in mho/cm, if mu=3800 cm^(2)//V-s .

What should be the order of number density of donor atoms to obtain an N semiconductor of conductivity 5 S cm^-1 . The mobility of electrons is 4000 cm^2//Vs and the number density of holes is negligible.

A potential difference of 2.5 V is applied across the faces of a germanium crystal plate. The face area of the crystal is 1 cm^(2) and its thickness is 1.0 mm . The free electron concentration in germanium is 2 xx 10^(19)m^(-3) and the electron and holes mobilities are 0.33m^(2)/V s and 0.17 m^(2)/V s respectively. The current across the plate will be