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silicon doped with electron rich imp...

silicon doped with electron rich impurity forms ………. .

A

p-type semiconductor

B

n-type semiconductor

C

intrinsic semiconductor

D

insulator

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The correct Answer is:
b
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PRADEEP-STATES OF MATTER: SOLID MATTER-NCERT EXEMPLAR PROBLEMS (MULTIPLE CHOICE- I)
  1. Schottky defect is observed in crystals when ……………. .

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  2. which of the following is true about the change the charge acq...

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  3. To get a n- type semiconductor from silicon , it should be doped...

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  4. The total of tetrahedral voids in the face centred unit cell is ……...

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  5. Which of the following point defects are shown by AgBr (s) crys...

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  6. In which pair most efficient packing is present?

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  7. The percentage of empty space in a body centred cubic arrangement is :

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  8. which of the following statemets is not true about the hexagona...

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  9. in which of the following structures coordination number for cati...

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  10. What is the coordination number in a square close packed structures in...

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  11. which kind of defects are introduced by doping ?

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  12. silicon doped with electron rich impurity forms ………. .

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  13. Which of the following statements is not true ?

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  14. which of the following is not true about the ionic solids ?

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  15. A ferromagnetic substance becomes a permanent magnet when it is placed...

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  16. The correct order of the packing efficiency in different types of unit...

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  17. which of the follwing defects is also known as dislocation defect ...

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  18. In the cubic close close packing, the unit cell has....

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  19. The edge lengths of the unit cells in terms of the radius of spheres c...

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  20. which of the following represents correct order of conductivity ...

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