No crystal is found to be prefect at room temperature. The defects present in the crystals can be stoichimetric or non-stoichiometric. Due to non-stoichimetric defects, the formula of the ionic compound is different from the ideal formula. For example , the ideal formula of ferrous oxide should be FeO but actually in one sample , it was found to be ` Fe_(0.93)`O. This is because the crystal may have some ferric ions in place of ferrous ions. These defects change the propeties of the crystals. In some cases, defects are introduced to have crystals of desired properties as required in the field of electronics. Doping of elments of Group 14 with those of Group 13 or 15 is most common. In ionic compounds, usually impurities are introduced in which the cation has higher valency than the cation of the parent crystal, e.g, ` SrCl_(2)` into NaCl.
which one of the following doping will produces p-type semicomductor ?

Options

A. Silicon doped with arsenic
B. Germanium doped with phosphorus
C. Germanium doped with aluminium
D. Silicon doped with phosphorus

Answer

C

Explanation

Germanium belongs to Group 14 while aluminium belongs to Group 13. Hence, germanium doped with aluminium will produce p-type semiconductor .