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Pure Si at 300 K has equal electron (ne)...

Pure Si at 300 K has equal electron `(n_e)` and hole `(n_(h))` concentration of `2.xx10^(16)` per `m^(3)`. Doping by indium increases `n_(h)` to `4xx10^(22) ` per `m^(3)`. Calculate `n_(e)` in the doped silicon.

Text Solution

Verified by Experts

For extrinsic semiconductors
`n_(e).n_(h)~~n_(i)^(2)`
Or, `n_(e)=(n_(i)^(2))/(n_(h))=((2xx10^(16))^(2))/((4xx10^(22)))=1xx10^(10)` per `m^(3)`
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