A pure semiconductor has equal electron and hole concentration of `10^(6)m^(-3)`. Dopping by indium increases `n_(h)` to `4.5xx10^(22)m^(0k3)`. What is `n_(e)` in the dopped semiconductor?

A pure semiconductor has equal electron and hole concentration of 10^(16) m^(-3) . Doping by indium increases n_(h) to 5 xx 10^(22) m^(-3) . Then the value of n_(e) in the doped semiconductor is

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Calculate n_(e) in the doped silicon.

Pure Si at 300 K has equal electron (n_(i)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h)4.5xx10^(22) m^(-3) n_(e) in the doped Si is

A pure semiconductor has equal electron and hole concentration of 10^(16) m^(-3) . Doping by indium increases number of hole concentration n_(h) to 5 xx 10^(22) m^(-3) . Then, the value of number of electron concentration n_(e) in the doped semiconductor is

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(e) in the doped Si-

Pure Si at 300K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) Doping by indium increases n_(h) to 3xx10^(22)m^(-3) . Calculate n_(e) in the doped Si.