A block of pure silicon at `300 K` has a length of `10 cm` and an area of `1.0 cm^(2)`. A battery of emf `2V` is connected across it. The mobility of electron is `0.14 m^(2) v^(-1) S^(-1)` and their number density is `1.5 xx 10^(16) m^(-3)`. The mobility of holes is `0.05 m^(2) v^(-1) S^(-1)`.
The electron current is

A block of pure silicon at 300 K has a length of 10 cm and an area of 1.0 cm^(2) . A battery of emf 2V is connected across it. The mobility of electron is 0.14 m^(2) v^(-1) S^(-1) and their number density is 1.5 xx 10^(16) m^(-3) . The mobility of holes is 0.05 m^(2) v^(-1) S^(-1) . The hole current is

A block of pure silicon at 300 K has a length of 10 cm and an area of 1.0 cm^(2) . A battery of emf 2V is connected across it. The mobility of electron is 0.14 m^(2) v^(-1) S^(-1) and their number density is 1.5 xx 10^(16) m^(-3) . The mobility of holes is 0.05 m^(2) v^(-1) S^(-1) . The total current in the block is

Cross-sectional area of silicon slab at 300 K temperature having length 10 cm is 1 xx 10^(-4) m^(2) Find the current passing through slab if 2 V battery is joined paraUcl to its lengch mobility of electron = 0.14 m^(2) V^(-1) S^(-1) and electron density = 1.5 xx 10^(16) m^(-3) .

A block of intrinsic silicon at room temperature has length 0.2 m and area of cross sectio 4xx10^(-4) m^(2) a battery of 3 V is connected across the block find the (i) electron and hole currents (ii) magnitude of total current

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of electrons in this semiconductor are

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

The number densities of electrons and holes in pure silicon are 1.5 xx 10^16m^-3 . On doping with indium, the hole density becomes 4.5 xx 10^22 m^-3 , the electron density is

A semiconductor has an electron concentration of 8xx10^(13) per cm^(3) and a hole concentration of 5xx10^(12) per cm^(3) . The electron mobilityis 25,000 cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) (i) The semiconductor is n -type (ii) the semiconductor is p -type (iii) the conductivity is 320m mho cm^(-1) (iv) the conductivity is 80m mho cm^(-1)