A semiconductor has equal electron and hole concentration of `6xx 10^(4)m^(-3)`. On doping with a certain impurity, electron concentration increases to `8 xx 10^(12)m^(-3)`. Identify the type of semiconductor.

A semiconductor has equal electron and hole concentration of 6 xx 10^4m^-3 . On doping with a certain impurity electron concentration increases to 8xx10^12m^-3 . Identify the type of semiconductor?

A semiconductor has equal electron and hole concertration 6xx10^(8) m^(-3) . On doping with a certain impurity electron concertration increase to 8xx10^(12) m^(-3) . Identify the type of semiconductor after doping.

A semiconductor has equal electron and hole concentration 6xx10^8 m^(-3) .On doing with a certain impurity,electron concentration increases to 8xx10^(12) m^(-3) .Identify the type of semicondcutor after doping.

A semiconductor has equal electron and hole concentration of 6xx10^(8)//m^(3) . On doping with certain impurity, electron concentration increases to 9xx10^(12)//m^(3) . (i) Identify the new semiconductor obtained after doping. (ii) Calculate the new hole concentration. (iii) How does the energy gap vary with doping?

A semiconductor has equal electron and hole concentration of 6xx10^(8)//m^(3) . On doping with certain impurity, electron concentration increases to 9xx10^(12)//m^(3) . (i) Identify the new semiconductor obtained after doping. (ii) Calculate the new hole concentration. (iii) How does the energy gap vary with doping?

A semiconductor has equal electron and hole concentration of 6xx10^(8)//m^(3) . On doping with certain impurity, electron concentration increases to 9xx10^(12)//m^(3) . (i) Identify the new semiconductor obtained after doping. (ii) Calculate the new hole concentration. (iii) How does the energy gap vary with doping?