The number density of electrons and holes in pure silicon at `27^@` C are equal and its value is `2.0 xx 10^16 m^(-3)`. On doping with indium the hole density increases to `4.5xx 10^22 m^(-3)`, the electron density in doped silicon is

The number densities of electrons and holes in a pure germanium at room temperature are equal and its value is 2xx 10^(16) per m^(3) . On doping with aluminium the hole density increases to 3.5 xx10^(22) per m^(3) , then the electron density in doped germanium is

the no. densities of electrons and holes in a pure germanium at room temperature are equal and its value is 2×10^(16) per m^3 . On doping with aluminium the hole density increases to 3.5×10^(22) per m^3 then the electron density in dppoed germanium is

The number densities of electrons and holes in pure silicon are 1.5 xx 10^16m^-3 . On doping with indium, the hole density becomes 4.5 xx 10^22 m^-3 , the electron density is

The density of an electron-hole pair in a pure germanium is 3xx 10^(16) m^(-3) at room temperature. On doping with aluminium, the hole density increases to 4.5 xx 10^(22) m^(-3) . Now the electron density ( in m^(-3)) in doped germanium will be

The density of an electron-hole pair in a pure germanium is 3xx 10^(16) m^(-3) at room temperature. On doping with aluminium, the hole density increases to 4.5 xx 10^(22) m^(-3) . Now the electron density ( in m^(-3)) in doped germanium will be

The density of an electron - hole pair in a pure germanium is 3xx10^(-16) m^(-3) at room temperature. On doping with aluminium , the hole density increase to 4.5xx10^(22) m^(-3) Now the electron density ( in m ) in doped germanium will be