REVERSE BIASING OF P-N JUNCTION

P-N Junction Formation||Junction Voltage and depletion Layer||Biasing OF a P-N junction||Forward and Reverse Biasing||V-I Characterstic OF a P-N Junction||Resistance OF a P-N Junction||Dynamic Resistance OF a P-N junction|| Characterstics OF an ideal diode

The ratio of forward biased to reverse biased resistance for P-N junction diode is

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are

Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse biase. Reason: In reverse biasing, no current flow through the junction.

Explain (i) forward biasing (ii) reverse biasing of a P-N junction diode. With the help of a circuit diagram, explain the use of this device as a half wave rectifier.

What is avalanche breakdown for a P-N junction diode in reversed biased mode.

In V - I characteristics of p-n junction in reverse biasing results in

What is forward and reverse biased in P.N. junction?