Mobility of electron in N-type Ge is `5000 cm^(2)//"volt"` sec and conductivity `5 "mho/cm"`. If effect of holes is negligible then impurity concentration will be

Mobility of electrons in n -type Ge is 5000 cm^2V^-1 s^-1 and conductivity 5 mho/cm. If effect of holes is negligible, then impurity concentration is k xx 10^(15) / cm^3 . Find k .

Mobility of electrons in Germanium of N types & their conductivity are 3900 cm^2 /volt-sec & 5 mho/cm respectively. If effect of holes are negligible then concentration of impurity will be-

The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible

Mobility of electrons in germanium of n -type and their conductivity are 3900 cm^-2 V^-1 s^-1 and 5 mho/cm , respectively. If effect of holes is negligible, then the concentration of impurity is n xx 10^(15) . Find n .

The number desnity of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5 ohm^(-1) cm^(-1) is axx10^(15)cm^(-3) . Given that the mobility of electron in n-type Ge is 3900 cm^(2)//Vs , Neglect the contribution of holes to conductivity. What is the integer value of a?

Mobilities of electrons and holes in a sample of a semiconductor is 25000 cm^(2) V^(-1) s^(-1) and 200 cm^(2) Vs respectively if the electron and hole concentration are 9 xx10^(13) per cm^(3) and 4xx10^(12) per cm^(3) respectively calculate the conductivity of the sample

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-

Determine the number of density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an N-type semi-conductor of conductivity 6.4 Omega cm^(-1) . Given that mobility of electron in N-type Ge is 4000 cm^(2)//Vs . Neglect the contribution of holes. to conductivity.