A p-n junction is fabricated from a semiconductor with band gap of `2.8eV`. Can it detect a wavelength of `6000nm`?

A p-n junction is fabricated from a semiconductor with band gap of 3.0 eV . Can it detect a wavelength of (i) 600nm (ii) 400nm ? Given, h=6.6xx10^(-34)Js .

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photo diode is fabricated from a semiconductor with band gap of 2.8eV. Can it detect a wavelength of 6000nm?