An `n-p-n` transistor power amplifier in `C-E` configuration gives.

In an n-p-n transistor

Consider an n-p-n transistor amplifer in common-emitter configuration. The current gain of the transistor is 100 . If the collector current changes by 1mA , what will be the change in emitter current?

Considering a.p-n junction as a capacitor, forward with p and n material acting as thin metal electrodes and depletion layer width acting as seperation between them. Basing on this assume that a n-p-n transistor is working as an amplifier in CE configuration. If C_(1) and C_(2) are base-emiter and collector emitter junction capacitances, then :

A n-p-n transistor conducts when

When n-p-n transistor is used as an amplifier

When n-p-n transistor is used as an amplifier :

Define the dynamic output resistance of a transistor amplifier in common - emitter configuration.

Assertion : A transistor amplifier in common emitter configuration has a low input impedence. Reason : The base to emitter region is forward biased.

In a p-n-p transistor operating as amplifier with common emitter configurations a change in base current from 100 muA to 200 muA produces to change in collector current grain of transistor