Consider a p-n junction diode having the characterstic `i=i_0(e^eV//kT-1)`where `i_0=20(mu)A`.The diode is oprated at T=300K.(a)Find the current through the diode when a voltage of 300 mV is applied across it in forward bias, (b)At what voltage does the current double?

Consider a p-n junction diode having the characteristic i=i_0(e^(eV//kT)-1) where i_0=20(mu)A . The diode is operated at T=300K. (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias, (b) At what voltage does the current double?

Consider a p-n junction diode having the characteristic i=i_0(e^(eV//kT)-1) where i_0=20(mu)A . The diode is operated at T=300K. (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias, (b) At what voltage does the current double?

A p-n junction diode has breakdown voltage of 28V . If applied external in reverse bias is 40 V the current through it is

In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

Assuming that the silicon diode having resistance of 20 Omega , the current through the diode is (knee voltage 0.7 V)

What causes a larger current through a P-N junction diode when forward biased?