The free electron concentration (n) in the conduction band of a semiconductor at a temperature T kelvin is described in terms of `E_(g)` and T as-

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

The probbility of electrons to be found in the conduction band of an intrinsit semiconductor at a finile temperature

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

Assertion: The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap. Reason: It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

Assertion: The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature decrease exponentially with increasing band gap. Reason: It will be more difficult for the electron to cross over the large band gap while going from valence band to conduction band.

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by