A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

Ap-n photodiode is fabricated from a semiconductor with band gap of 2.8eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A p -n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000 nm ?

A p-n photo diode is fabricated from a semiconductor with band gap of 2.8eV. Can it detect a wavelength of 6000nm?

A p-n photodiode is fabricated from a semiconductor with band - gap of 2.8 eV . Can it detect a wavelength of 6000nm?

A p-n photodiode is fabricated from a semiconductor with hand gap of 2.8 eV . Can it detect a wavelength of 6000 n m ?

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.