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Iron and silicon wires are heated form 3...

Iron and silicon wires are heated form `30^(@)C` to `50^(@)C`. The correct statement is that

A

Resistance of both wires Increases

B

Resistance of both wires decreases

C

Resistance of iron wire increases and that of silicon wire decreases

D

Resistance of iron wire decreases and that of silicon wire increases

Text Solution

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The correct Answer is:
C
Temperature coeffiecient of resistance of metals is positive while that of semiconductor is negative
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A2Z-SEMICONDUCTOR ELECTRONICS-EXERCISE
  1. Iron and silicon wires are heated form 30^(@)C to 50^(@)C. The correct...

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  2. In a semiconductor,

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  3. A peice of copper and the other of germanium are cooled from the room ...

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  4. Energy band in solids are a consequence of

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  5. When forward bias is applied to a P-N junction, then what happence to ...

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  6. When npn transistor is used as an amplifler

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  7. For a transistor ampliflier in common emiter configuration for load im...

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  8. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

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  9. In a common base ampifier , the phase difference between the input sig...

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  10. To obtain a P-type Si semiconductor, we need to dope pure Si with

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  11. Two PN-junction can be connected in series by three different methods ...

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  12. In a p- n junction diode not connected to any circuit,

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  13. Which of the following statements is not true?

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  14. The dominant mechanisms for motion of charge carriers in forward and r...

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  15. For a given plate voltage , the plate current in a triode valve is max...

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  16. The probbility of electrons to be found in the conduction band of an i...

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  17. The typical ionisation energy of a donor in silicon is

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  18. In the circuit given below, V(t) is the sinusoidal voltage source, vol...

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  19. The circuit shown in following figure contanis two diode D(1) and D(2)...

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  20. The following configuration of gate is equivalent to

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  21. The output of a NAND gate is 0

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