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A P-type semiconductor is formed when ...

A `P`-type semiconductor is formed when
`(A)`. `As` impurity is mixed in `Si`
`(B)`. `Al` impurity is mixed in `Si`
`(C)`. `B` impurity is mixed in `Ge`
`(D)`. `P` impurity is mixed in `Ge`

A

`A` and `C`

B

`A` and `D`

C

`B` and `C`

D

`B` and `D`

Text Solution

Verified by Experts

The correct Answer is:
C
The resistance of semiconductor decreases with the increases in temperature.
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  1. When N-type of semiconductor is heated

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  2. To obtain a P-type germanium semiconductor, it must be dopped with

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  3. A P-type semiconductor is formed when (A). As impurity is mixed in ...

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  5. In a P-type semi-conductor

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  7. In P-type semiconductor the majority and minority charge carriers are ...

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  8. Electronical configuration of germenium is 2,8,18 and 4. To make it ex...

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  9. The impurity atoms with which pure silicon should be doped to make a p...

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  10. AN-type semiconductor is

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  11. To obtain a P-type Si semiconductor, we need to dope pure Si with

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  12. The majority charge carriers in P-type semiconductors are

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  13. When a battery is connected to a P-type semiconductor with a metallic ...

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  14. A P-type semiconductor can be obtained by adding

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  15. When Ge crystal are dopped with phosphorus atom, then it becomes

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  16. Wires P and Q have the same resistance at ordinary (room) temperature....

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  17. Let n(p) and n(e) be the number of holes and conduction electrons resp...

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  18. In P-type semiconductor germenium is dopped with

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  19. In N-type semiconductors, majority charge carriers are

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  20. If n(e) and n(h) are the number of electrons and holes in a semiconduc...

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