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If n(e) and n(h) be the number of electr...

If `n_(e)` and `n_(h)` be the number of electrons and drift velocity in a semiconductor. When the temperature is increased

A

`n_(e)` increases and `v_(d)` decreases

B

`n_(e)` decreases and `v_(d)` increases

C

Both `n_(e)` and `v_(d)` increases

D

Both `n_(e)` and `v_(d)` decreases

Text Solution

Verified by Experts

The correct Answer is:
A
Because `v_(d)=i/((n_(e))eA)`
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A2Z-SEMICONDUCTOR ELECTRONICS-Classification Of Metals
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  3. Which of the following energy band diagrams shows the N-type semicondu...

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  4. If n(e) and n(h) be the number of electrons and drift velocity in a se...

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  5. The energy gap of silicon is 1.14 eV. The maximum wavelength at which ...

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  6. A Ge specimen is doped with Al. The concentration of acceptor atoms is...

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  8. In a semiconducting material the mobilities of electrons and holes are...

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  9. Which of the energy band diagrams shown in the figure corresponds to t...

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  10. The energy band diagrams for three semiconductor samples of silicon ar...

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  11. Carbon , silicon and germanium have four valence elcectrons each . The...

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  12. when the electrical conductivity of a semiconductor is due to the brea...

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  13. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  14. In intrinsic semiconductor at room of current carriers would be

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  15. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  16. In extrinsic semiconductors

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  17. The width of forbidden gap in silicon crystal is 1.1 eV. When the crys...

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  18. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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