Home
Class 12
PHYSICS
The electron mobility in N-type germaniu...

The electron mobility in `N`-type germanium is `3900cm^(2)//v-s` and its conductivity is `6.24 mho//cm`, then impurity concentration will be if the effect of cotters is negligible

A

`10^(15) cm^(3)`

B

`10^(13) //cm^(3)`

C

`10^(12) //cm^(3)`

D

`10^(16) //cm^(3)`

Text Solution

Verified by Experts

The correct Answer is:
D
`sigma=en_(e)mu_(e) implies n_(e)=(sigma)/(emu_(e))=6.24/(1.6xx10^(-19xx3900))=10^(16)//cm^(3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Junction Diode|57 Videos

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Diode In Circuits|40 Videos

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise EXERCISE|29 Videos

  • NUCLEAR PHYSICS

    A2Z|Exercise Section D - Chapter End Test|29 Videos

  • SOURCE AND EFFECT OF MAGNETIC FIELD

    A2Z|Exercise Section D - Chapter End Test|30 Videos

Similar Questions

Explore conceptually related problems

Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and conductivity 5 "mho/cm" . If effect of holes is negligible then impurity concentration will be

Mobility of electrons in n -type Ge is 5000 cm^2V^-1 s^-1 and conductivity 5 mho/cm. If effect of holes is negligible, then impurity concentration is k xx 10^(15) / cm^3 . Find k .

Mobility of electrons in germanium of n -type and their conductivity are 3900 cm^-2 V^-1 s^-1 and 5 mho/cm , respectively. If effect of holes is negligible, then the concentration of impurity is n xx 10^(15) . Find n .

On doping germanium with donor atoms of density 10^(17) cm^(-3) , find its conductivity in mho/cm, if mu=3800 cm^(2)//V-s .

On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.

Mobility of electrons in Germanium of N types & their conductivity are 3900 cm^2 /volt-sec & 5 mho/cm respectively. If effect of holes are negligible then concentration of impurity will be-

A semiconductor has an electron concentration of 8xx10^(13) per cm^(3) and a hole concentration of 5xx10^(12) per cm^(3) . The electron mobilityis 25,000 cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) (i) The semiconductor is n -type (ii) the semiconductor is p -type (iii) the conductivity is 320m mho cm^(-1) (iv) the conductivity is 80m mho cm^(-1)

A2Z-SEMICONDUCTOR ELECTRONICS-Classification Of Metals
  1. In P-type semiconductor, there is

    Text Solution

    |

  2. The velence of the impurity atom that is to the be added to garmenium ...

    Text Solution

    |

  3. Which of the following energy band diagrams shows the N-type semicondu...

    Text Solution

    |

  4. If n(e) and n(h) be the number of electrons and drift velocity in a se...

    Text Solution

    |

  5. The energy gap of silicon is 1.14 eV. The maximum wavelength at which ...

    Text Solution

    |

  6. A Ge specimen is doped with Al. The concentration of acceptor atoms is...

    Text Solution

    |

  7. The electron mobility in N-type germanium is 3900cm^(2)//v-s and its c...

    Text Solution

    |

  8. In a semiconducting material the mobilities of electrons and holes are...

    Text Solution

    |

  9. Which of the energy band diagrams shown in the figure corresponds to t...

    Text Solution

    |

  10. The energy band diagrams for three semiconductor samples of silicon ar...

    Text Solution

    |

  11. Carbon , silicon and germanium have four valence elcectrons each . The...

    Text Solution

    |

  12. when the electrical conductivity of a semiconductor is due to the brea...

    Text Solution

    |

  13. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

    Text Solution

    |

  14. In intrinsic semiconductor at room of current carriers would be

    Text Solution

    |

  15. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

    Text Solution

    |

  16. In extrinsic semiconductors

    Text Solution

    |

  17. The width of forbidden gap in silicon crystal is 1.1 eV. When the crys...

    Text Solution

    |

  18. A silicon specimen is made into a P-type semiconductor by dopping, on ...

    Text Solution

    |

  19. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

    Text Solution

    |

  20. A PN junction diode cannot be used

    Text Solution

    |