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The width of forbidden gap in silicon cr...

The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band is

A

Greater than `0.55 eV`

B

Equal to `0.55 eV`

C

Lesser than `0.55 eV`

D

Equal to `1.1 eV`

Text Solution

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The correct Answer is:
C
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A2Z-SEMICONDUCTOR ELECTRONICS-Classification Of Metals
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  5. The energy gap of silicon is 1.14 eV. The maximum wavelength at which ...

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  6. A Ge specimen is doped with Al. The concentration of acceptor atoms is...

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  7. The electron mobility in N-type germanium is 3900cm^(2)//v-s and its c...

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  8. In a semiconducting material the mobilities of electrons and holes are...

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  9. Which of the energy band diagrams shown in the figure corresponds to t...

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  10. The energy band diagrams for three semiconductor samples of silicon ar...

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  11. Carbon , silicon and germanium have four valence elcectrons each . The...

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  12. when the electrical conductivity of a semiconductor is due to the brea...

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  13. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  14. In intrinsic semiconductor at room of current carriers would be

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  15. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  16. In extrinsic semiconductors

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  17. The width of forbidden gap in silicon crystal is 1.1 eV. When the crys...

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  18. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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  19. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

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  20. A PN junction diode cannot be used

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