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Which of the following statement is not...

Which of the following statement is not true ?

A

The resistance of intrinsic of semiconductor decrease with increases of temperature

B

Doping pure `Si` with interval impurities give `P`-type semiconductor

C

The mejority carriers in `N`-type semiconductors are holes

D

A `PN`-junction can act as a semiconductor diode

Text Solution

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The correct Answer is:
C

In `N`-type semiconductor majority change carriers are electrons.
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A2Z-SEMICONDUCTOR ELECTRONICS-Junction Diode
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  2. The depletion layer in diode is 1 mum wide and the knee potential is 0...

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  3. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

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  4. In a p- n junction diode not connected to any circuit,

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  5. Which of the following statement is not true ?

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  6. The dominant mechanisms for motion of charge carriers in forward and r...

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  7. In P-N junction, avalanche current flows in circuit when biassing is

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  8. The depletion layer in P-N junction region is caused by

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  9. The reason of current flow in P-N junction forward biase is

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  10. The resistance of a revese biased P-N junction diode is about

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  11. No biase is applied to a P-N junction, then the current

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  12. Zener diode is used as

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  13. In P-N junction, the barrier potential offerse resistance to

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  14. A semiconducting device is connected in a series circuit with a batter...

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  15. The approximate ratio of resistance in the forward and reverse biase o...

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  16. In a forward biased PN- junction diode, the potential barrier in the d...

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  17. Different voltages are applied across a P-N junction and the currents ...

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  18. Consider the following statement A and B and identify the correct choi...

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  19. A P-type semiconductor has acceptor levels 57 meV above the valence ba...

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  20. Which one is forward biase?

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