The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Options

A. Drift in forwards bias, diffusion in reverse biase
B. Diffusion in forward bias, drift in reverse bias
C. Diffusion in both forwards and reverse biase
D. Drift in both forward and reverse biase

Answer

B

Explanation

In forwards biasing the diffusion current increases and drift current remains constant so not current is due to the diffusion. In reverse biasing diffusion becomes more difficult so net current (very small) is due to the drift.