Home
Class 12
PHYSICS
In P-N junction, the barrier potential o...

In `P-N` junction, the barrier potential offerse resistance to

A

The resistance of intrinsic of semiconductor decrease with increases of temperature

B

Doping pure `Si` with interval impurities give `P`-type semiconductor

C

Only free electrons in `N` -type semiconductor are holes

D

Only holes in `P` region

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Diode In Circuits|40 Videos

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Junction Transistor|47 Videos

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Classification Of Metals|64 Videos

  • NUCLEAR PHYSICS

    A2Z|Exercise Section D - Chapter End Test|29 Videos

  • SOURCE AND EFFECT OF MAGNETIC FIELD

    A2Z|Exercise Section D - Chapter End Test|30 Videos

Similar Questions

Explore conceptually related problems

In a p-n junction , the barrier potential offers resistance to

In a p-n junction diode, the barrier potential opposes diffusion of

Barrier potential of Ga-As-P LED is

When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential 0.4V and the width of depletion region is 4.0 xx 10^(-7)m . this p-n junction is forwaed biased with a battery of voltage 3V adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. The intensity of the electric field in the depletion region when p-n junction is unbiased is

When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential 0.4V and the width of depletion region is 4.0 xx 10^(-7)m . this p-n junction is forwaed biased with a battery of voltage 3V adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. The resistance of resistor R is

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

A2Z-SEMICONDUCTOR ELECTRONICS-Junction Diode
  1. A device in which P and N-type semiconductors are used is more useful ...

    Text Solution

    |

  2. The depletion layer in diode is 1 mum wide and the knee potential is 0...

    Text Solution

    |

  3. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

    Text Solution

    |

  4. In a p- n junction diode not connected to any circuit,

    Text Solution

    |

  5. Which of the following statement is not true ?

    Text Solution

    |

  6. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  7. In P-N junction, avalanche current flows in circuit when biassing is

    Text Solution

    |

  8. The depletion layer in P-N junction region is caused by

    Text Solution

    |

  9. The reason of current flow in P-N junction forward biase is

    Text Solution

    |

  10. The resistance of a revese biased P-N junction diode is about

    Text Solution

    |

  11. No biase is applied to a P-N junction, then the current

    Text Solution

    |

  12. Zener diode is used as

    Text Solution

    |

  13. In P-N junction, the barrier potential offerse resistance to

    Text Solution

    |

  14. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  15. The approximate ratio of resistance in the forward and reverse biase o...

    Text Solution

    |

  16. In a forward biased PN- junction diode, the potential barrier in the d...

    Text Solution

    |

  17. Different voltages are applied across a P-N junction and the currents ...

    Text Solution

    |

  18. Consider the following statement A and B and identify the correct choi...

    Text Solution

    |

  19. A P-type semiconductor has acceptor levels 57 meV above the valence ba...

    Text Solution

    |

  20. Which one is forward biase?

    Text Solution

    |