Consider the following statement `A` and `B` and identify the correct choice of the given answers
`A:` The width of the depletion layer in a `P-N` junction diode increases in forwards biase
`B:` In an intrinsic semiconductor the fermi energy level is exactely in the middle of the forbidden gap

Options

A. `A` is true and `B` is false
B. Both `A` and `B` are false
C. `A` is false and `B` is true
D. Both `A` and `B` are true

Answer

C

Explanation

In forward biasing of `PN` junction diode with depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap