Which one of the following statement is false?

Options

A. Pure `Si` doped with trivalent impurities give a `p`-type semiconductor
B. Majority carriers in a `n`-type semiconductor are holes
C. Minority carriers in a `p`-type semiconductor are electrons
D. The resistance of intinsic semiconductor decreases with increases of temperature

Answer

B

Explanation

`p`-type semiconductors are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor `(Ge)`. Majority charge carriers: holes
Minority charge carriers : electrons
`n`-type semiconductors are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor `(Ge)`. Majority charge carriers are electrons. The resistance of intrinsic semiconductor decreases with increases of temperature.