Home
Class 12
PHYSICS
In a semiconducting material the mobilit...

In a semiconducting material the mobilities of electrons and holes are `mu_(e)` and `mu_(h)` respectively. Which of the following is true?

A

`mu_(e) lt mu_(h)`

B

`mu_(e) gt mu_(h)`

C

`mu_(e)=mu_(h)`

D

`mu_(e) lt 0 , mu_(h) gt 0`

Text Solution

Verified by Experts

The correct Answer is:
B

In a semiconductor, hole is equivalent to positively charged particle which moves in a direction opposite to that of an electron. Since electrons are lighter in mass compared to positively charged particles they move easily in the semiconducting material. Hence, the mobility of holes in `p`-type semiconductor is less than mobility of electrons in `n`-type semiconductor. i.e. `n_(e)gtn_(h)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Assertion Reason|18 Videos
  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise SECTION -D|1 Videos
  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise AIPMT/NEET Questions|77 Videos
  • NUCLEAR PHYSICS

    A2Z|Exercise Section D - Chapter End Test|29 Videos
  • SOURCE AND EFFECT OF MAGNETIC FIELD

    A2Z|Exercise Section D - Chapter End Test|30 Videos

Similar Questions

Explore conceptually related problems

Relative permittivity and permeability of a material are epsilon_(r) and mu_(r) respectively which of the following values of these quantities are allowed for a diamagnetic material ?

Relative permitivity and permeability of a material epsilon_(r) and mu_(r) , respectively . Which of the following values of these quantities are allowed for a diamagnetic material?

If refractive index of core & cladding are mu_(1) & mu_(2) respectively then :

The mobility of electrons when compared tot hat of holes is

A semiconductor having electron and linear mobilities mu_(n) and mu_(p) respectively. If its intrinsic carrier density is n_(i) , then what will be the value of hole concentration P for which the conductivity will be maximum at a given temperature?

A pure silicon crystal of length l(0.1m) and area A(10^(-4) m^(2)) has the mobility of electron (mu_(e)) and holes (mu_(h)) as 0.135 m^(2)//Vs and 0.48 m^(2)//Vs , respectively, If the voltage applied across it is 2V and the intrinsic charge concen-tration it is 2V and the intrinsic charge concen-tration is n_(i) = 1.5 xx 10^(6) m^(-3) , then the total current flowing through the crystal is.

A2Z-SEMICONDUCTOR ELECTRONICS-AIIMS Questions
  1. Which of the following logic gates is an universal gate?

    Text Solution

    |

  2. Consider an n-p-n transistor amplifer in common-emitter configuration....

    Text Solution

    |

  3. In a semiconducting material the mobilities of electrons and holes are...

    Text Solution

    |

  4. The circuit shown below acts as

    Text Solution

    |

  5. For sky wave propagation of 10 MHz signal, what should be the minimum ...

    Text Solution

    |

  6. Reverse bias applied to a junction diode

    Text Solution

    |

  7. The circuit given below represents which of the logic operations?

    Text Solution

    |

  8. An amplifier has a voltage gain A(V)=1000. The voltage gain in dB is

    Text Solution

    |

  9. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

    Text Solution

    |

  10. The minimum potential difference between the base and emitter required...

    Text Solution

    |

  11. If in a p-n junction diode , a square input single of 10 V is applied...

    Text Solution

    |

  12. The input resistance of a common emitter transistor amplifer, if the o...

    Text Solution

    |

  13. The combination of the gates shown in the figure below produces

    Text Solution

    |

  14. In case of NPN-transistor the collector current is always less than th...

    Text Solution

    |

  15. The following truth table corresponds to the logic gate |(A,0,0,1,1)...

    Text Solution

    |

  16. In transistor, a change of 8.0 mA in the emitter current produces a ch...

    Text Solution

    |

  17. A truth table is given below. Which of the following has this types fo...

    Text Solution

    |

  18. A semiconductor X is made by dopping a germanium crystal with arsenic ...

    Text Solution

    |

  19. The diode shown in the circuit is a silicon diode. The potential diffe...

    Text Solution

    |

  20. In the given figure, which of the diodes are forward biased?

    Text Solution

    |