Home
Class 12
PHYSICS
A battery of emf 2V is connected across ...

A battery of emf `2V` is connected across a block of length `0.1m` and area of cros-section `1xx10^(-4)m^(2)`. If the block is of intrinsic silocon at `300K`, find the electron and hole currents. What will be the magnitude of the total current? What will be the magnitude of the total current if germanium is used instead of silicon?
Given that for `Si` at `300K`: `mu_(e)=0.135m^(2)V^(-1)s^(-1),mu_(h)=0.048m^(2)V^(-1)s^(-1)` and intristic carrier concentration `n_(i)=1.5xx10^(16)m^(-3)`. For `Ge` at `300K: mu_(e)=0.39m^(2)V^(-1)s^(-1),mu_(h)=0.19m^(2)V^(-1)s^(-1)` and `n_(i)=2.4xx10^(19)m^(-3)`

Text Solution

Verified by Experts

For silicon
Total current, `I=eA(n_(e)v_(e)+n_(h)v_(h))`
or `I_(s)=eA(n_(e)E mu_(e)+n_(h)Emu_(h))`
`=eA(n_(e)mu_(e)+n_(h)mu_(h))E`
`=eA (e_(e)mu_(e)+n_(h)mu_(h))V/I`
`=(1.6xx10^(19))xx(1xx10^(4))[(1.5xx10^(16))xx(0.135)+(1.5xx10^(16))xx0.048]xx2/0.1`
`=8.7xx10^(-7)A`
For Germanium `I_(G)=(1.6xx10^(-19))xx(1xx10^(-4))[(2.4xx10^(19))xx0.39+(2.4xx10^(19))xx0.19]xx2/0.1`
`=4.46xx10^(-3)A`
`I_(G)/I_(s)=(4.46xx10^(-3))/(8.7xx10^(-7))~~0.512xx10^(4)~~10^(4)`
Therefore, the total current in germanium is about four orders of the total current in silicon.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise MCQ|5 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise INTEGER TYPE QUESTION|2 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos
  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos
  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

A block of intrinsic silicon at room temperature has length 0.2 m and area of cross sectio 4xx10^(-4) m^(2) a battery of 3 V is connected across the block find the (i) electron and hole currents (ii) magnitude of total current

Find the number density of impurity atoms that must be added to a pure silicon crystal inorder to convert it to have resistivity (i) 10^(-1)Omegam n-type silicon (ii) 10^(-1)Omegam p-type silicon. Give for silicon: mu_(e)=0.135m^(2)V^(-1)s^(-1) and mu_(h)=0.048m^(2)V^(-1)s^(-1) .

Predict effect on the electrical properties of a silicon crystal at room temperature if every millionth silver atom is replased by an atom of indium. Given, concentration of silicon atoms =5xx10^(28) m^(-3) , Intrinsic carrier concentration =1.5xx10^(16) m^(-3), mue=0.135 m^(2)//Vs and mu_(h)=0.048m^(2)//Vs .

Mobility of electron and holes in a sample of intristic germanium at room temperature are 0.36m^(2)V^(-1)s^(-1) and 0.17 m^(2)V^(-1)s^(-1) . The electron and hole densities are each equal to 2.5xx10^(19) m^(-3) . The electrical conductivity of germanium is

A semiconductor has an electron concentration of 0.45 xx 10^(12) m^(-3) and a hole concentration of 5.0 xx 10^(20) m^(-3) . Calculate its conductivity. Given electron mobility = 0.135 m^(2) V^(-1) s^(-1) , hole mobility = 0.048 m^(2) V^(-1) s^(-1) ,

What is the conductivity of a semiconductor (in Omega^(-1) m^(-1) ) if electron density = 5 xx 10^(12) cm^(-3) and hole density = 8 xx 10^(13) cm^(-3) ? (mu_(e) = 2.3 V^(-1) s^(-1)m^(2), mu_(h) = 0.01 m^(2) V^(-1) s^(-1))

If resistivity of pure silicon is 3000 Omega m and the electron and hole mobilities are 0.12m^(2)v^(-1)s^(-1) and 0.045 m^(2)v^(-1)s^(-1) respectively, determine. The resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) Given e=1.6 xx10^(-19) c, rho =3000Omega, u_(e)=0.12m^(2)v^(-1)s^(-1), u_(h)=0.045m^(2)v^(-1)s^(-1)