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When a p-type semiconductor is brought i...

When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential `0.4V` and the width of depletion region is `4.0 xx 10^(-7)m`. this p-n junction is forwaed biased with a battery of voltage `3V` adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter with reading 20 mA and key K as shown in Fig.

The resistance of resistor R is

A

0.060 W

B

0.052 W

C

0.008 W

D

0.048 W

Text Solution

Verified by Experts

The correct Answer is:
C
Wattage of diode = voltage drop across diode xx current
`=0.4xx20xx10^(-3)=0.008 W`
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