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In case of a semiconductor, which of the...

In case of a semiconductor, which of the following statement is wrong?

A

Doping increases conductivity

B

Temperature coefficient of resistance is negative

C

Resistivity is in between that of a conductor and insulator

D

At absolute zero temperature, it behaves like a conductor

Text Solution

Verified by Experts

The correct Answer is:
D
(d) is wrong because at absolute zero temperature it behaves like an insulator and not as a conductor.
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MARVEL PUBLICATION-SEMICONDUCTORS -MCQs
  1. When the conductivity of a semiconductor is only due to breaking of co...

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  2. The energy band diagrams for three semiconductor samples of silicon ar...

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  3. In case of a semiconductor, which of the following statement is wrong?

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  4. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  5. The maximum wavelength of electromagnetic radiation, which can create ...

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  6. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

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  7. There are two Ge crystals A and B. Few aluminium atoms are added to A...

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  8. By increasing the temperature , the specific resistance of a conductor...

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  9. In semiconductors at a room temperature

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  10. Which of the following , when added as an impurity, into the silicon, ...

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  11. A semiconductor has phosphorus as impurity, then it will have

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  12. The conductivity of a semiconductor increases with increase in tempera...

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  13. In a P -type semi-conductor, germanium is dopped with

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  14. Carbon , silicon and germanium have four valence elcectrons each . The...

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  15. The electrical conductivity of a semiconductor increases when electrom...

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  16. In the energy band diagram of a material shown below, the open circles...

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  17. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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  18. The energy gap of silicon is 1.14 eV. The maximum wavelength at which ...

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  19. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  20. if n(e) and v(d) be the number of electrons and drift velocity in a se...

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