Home
Class 12
PHYSICS
In a p-n junction, the thickness of the ...

In a p-n junction, the thickness of the depletion region is `10^(-5)` m. What is the P.D. that should be applied across it, to produce an electric field of intensity `10^5` V /m ?

A

0.5 V

B

0.75 V

C

1 V

D

1.25 V

Text Solution

Verified by Experts

The correct Answer is:
C

`E=-"dV"/"dx" therefore dV=Edx = 10^5xx10^(-5) `=1 V
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP - 3|8 Videos
  • STATIONARY WAVES

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP-8|20 Videos

Similar Questions

Explore conceptually related problems

In a p-n junction, the thickness of the depletion layer is 10^(-6) m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

The order of thickness of depletion region in p-n junction is

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is

In a p-n junction depletion region has a thickness of the order of

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V (a) What will be the intensity of electric field in this region ? (b) if an electron, from n-side approaches the p-n junction with speed 5xx10^(5) m//s . then with what speed it will enter the p-side ?

In a p-n junction diode the thickness of deplection layer is 2 xx 10^(-6) m and barrier potential is 0.3 V . The intensity of the electrical field at the junction is.

In a p-n junction diode the value of drift current through depletion region

The depletion region of a p - n junction is formed

MARVEL PUBLICATION-SEMICONDUCTORS -MCQs
  1. What happens to the depletion region of a p-n junction ?

    Text Solution

    |

  2. What is the resistance of the diode circuit between A and B. (D1 and D...

    Text Solution

    |

  3. In a p-n junction, the thickness of the depletion region is 10^(-5) m....

    Text Solution

    |

  4. A potential barrier of 0.3 V exists across a p-n junction. If the depl...

    Text Solution

    |

  5. The potential barrier of a semiconductor is 0.6 Vat room temperature. ...

    Text Solution

    |

  6. The current through the diode in the given circuit is

    Text Solution

    |

  7. When the P end of P-N junction is connected to the negative terminal o...

    Text Solution

    |

  8. The electrical circuit used to get smooth dc output from a rectifier c...

    Text Solution

    |

  9. What is the current through an ideal p-n junction diode shown in figur...

    Text Solution

    |

  10. What is the current in the following diode circuit?

    Text Solution

    |

  11. The depletion layer in P-N junction region is caused by

    Text Solution

    |

  12. A junction diode has a resistance of 25 Omega when forward biased and...

    Text Solution

    |

  13. When forward bias is applied to a P-N junction, then what happence to ...

    Text Solution

    |

  14. In an unbiased p-n junction,

    Text Solution

    |

  15. The diode shown in the circuit is a silicon diode. The potential diffe...

    Text Solution

    |

  16. A diode having potential difference 0.5 V across its junction which do...

    Text Solution

    |

  17. In a reverse biased diode, when the applied voltage changes by 1V, the...

    Text Solution

    |

  18. Barrier potential of a p-n junction diode does not depend on

    Text Solution

    |

  19. When p-n junction diode is forward biased then

    Text Solution

    |

  20. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

    Text Solution

    |