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The depletion layer in P-N junction regi...

The depletion layer in `P-N` junction region is caused by

A

Drift of holes

B

Diffusion of charge carriers

C

Migration of impurity ions

D

Drift of electrons

Text Solution

Verified by Experts

The correct Answer is:
B
Depletion region is formed due to the diffiusion of eletrons from n top region and of holes from p region to n region.
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MARVEL PUBLICATION-SEMICONDUCTORS -MCQs
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  2. What is the current in the following diode circuit?

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  3. The depletion layer in P-N junction region is caused by

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  4. A junction diode has a resistance of 25 Omega when forward biased and...

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  5. When forward bias is applied to a P-N junction, then what happence to ...

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  6. In an unbiased p-n junction,

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  7. The diode shown in the circuit is a silicon diode. The potential diffe...

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  8. A diode having potential difference 0.5 V across its junction which do...

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  9. In a reverse biased diode, when the applied voltage changes by 1V, the...

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  10. Barrier potential of a p-n junction diode does not depend on

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  11. When p-n junction diode is forward biased then

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  12. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  13. Application of a forward biase to a p-n junction:

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  14. The barrier potential of a p-n-junction depends on (i) Type of sem...

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  15. A recutifier is used to

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  16. Freuency of given AC signal is 50 Hz. When it connected to a half - wa...

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  17. The depletion layer in a p-n junction diode is 10^(-6) m wide and its ...

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  18. A semiconducting device is connected is series with a battery, a resis...

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  19. The dominant mechanisms for motion of charge carriers in forward and r...

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  20. For the diode D, the forward resistance is zero and the backward resis...

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