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A semiconductor X is made by dopping a g...

A semiconductor `X` is made by dopping a germanium crystal with arsenic `(Z=33)`. A scond semiconductor `Y` is made by dopping germanium with indium `(Z=49)`. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

A

X is p-type, Y is n-type and the junction is forward biased

B

X is n-type, Y is p-type and the junction is forward biased

C

X is p-type, Y is n-type and the junction is reverse biased

D

X is n-type, Y is p-type and the junction is reverse biased

Text Solution

Verified by Experts

The correct Answer is:
D


Arsenic is pentavalent.
`therefore` X becomes an n-type germanium semiconductor.
Indium is trivalent hence Y becomes a p-type Ge semiconductor.
n and p are connected to the positive and negative terminals of the cell respectively. Hence it is a reversed biased p-n junction.
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