Home
Class 12
PHYSICS
INTRINSIC SEMICONDUCTORS...

INTRINSIC SEMICONDUCTORS

A

conduction band of an intrinsic semiconductor

B

conduction band of an extrinsic semiconductor

C

valance bands of intrinsic and extrinsic semiconductors

D

Super conductors

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP - 3|8 Videos
  • STATIONARY WAVES

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP-8|20 Videos

Similar Questions

Explore conceptually related problems

Assertion: The conductivity of an intrinsic semiconductor depends on its temperature. Reason The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped p-type semiconductor.

Intrinsic and Extrinsic Semiconductor

Name the charge carriers in the following at room temperature : (i) Conductor (ii) Intrinsic semiconductor (iii) Insulator.

Assertion : An N -type semiconductor has a large number of electrons but still it is electrically neutral. Reason: An N -type semiconductor is obtained by doping an intrinsic semiconductor with a pentavelent impurity.

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because

Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so obtained and majority charge carriers in it.

MARVEL PUBLICATION-SEMICONDUCTORS -MCQs
  1. Photodiode is a device

    Text Solution

    |

  2. The energy band gap is maximum in

    Text Solution

    |

  3. INTRINSIC SEMICONDUCTORS

    Text Solution

    |

  4. A semiconductor is known to have an electron concentration of 5 xx 10^...

    Text Solution

    |

  5. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  6. which one of the following statements is wrong ?

    Text Solution

    |

  7. In a p-n junction, the thickness of the depletion layer is 10^(-6) m. ...

    Text Solution

    |

  8. What is the current in the following junction diode circuit?

    Text Solution

    |

  9. A p-n junction diode has a forward bias resistance of 10Omega and a re...

    Text Solution

    |

  10. The width of the depletion region in a p-n junction diode is 400 nm an...

    Text Solution

    |

  11. The circuit has two oppositely connected ideal diodes in parallel. Wha...

    Text Solution

    |

  12. State the reason, why GaAs is most commonly used in making of a solar ...

    Text Solution

    |

  13. Avalanche breakdown is due to

    Text Solution

    |

  14. A P-N photodiode is fabricated from a semiconductor with a band gap of...

    Text Solution

    |

  15. What is the current flowing through 1 KOmega restsor in the following...

    Text Solution

    |

  16. For a transistor, beta = 50. Input resistance (Ri) = 200Omega. Output ...

    Text Solution

    |

  17. A transistor is used in common emitter configuration. Given its alpha=...

    Text Solution

    |

  18. If the current gain in CB configuration is 0.96, then the current gain...

    Text Solution

    |

  19. For a transistor the parameter beta=99. The value of the parameter alp...

    Text Solution

    |

  20. The following truth table corresponds to the logic gate |(A,0,0,1,1)...

    Text Solution

    |