Home
Class 12
PHYSICS
In a p-n junction, the thickness of the ...

In a p-n junction, the thickness of the depletion layer is `10^(-6)` m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

A

`10^6` V/m

B

`2xx10^5` V/m

C

`10^(-6)` V/m

D

`10^5` V/m

Text Solution

Verified by Experts

The correct Answer is:
B
`E=V/d=0.2/10^(-6) = 0.2 xx10^6`
`therefore E= 2 xx10^5` V/m
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP - 3|8 Videos

  • STATIONARY WAVES

    MARVEL PUBLICATION|Exercise TEST YOUR GRASP-8|20 Videos

Similar Questions

Explore conceptually related problems

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

In a p-n junction diode the thickness of deplection layer is 2 xx 10^(-6) m and barrier potential is 0.3 V . The intensity of the electrical field at the junction is.

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 0.1V . The electric field produced is

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V (a) What will be the intensity of electric field in this region ? (b) if an electron, from n-side approaches the p-n junction with speed 5xx10^(5) m//s . then with what speed it will enter the p-side ?

In a p-n junction, the thickness of the depletion region is 10^(-5) m. What is the P.D. that should be applied across it, to produce an electric field of intensity 10^5 V /m ?

When the p-n junction diode is reverse biased, the thickness of the depletion layer

MARVEL PUBLICATION-SEMICONDUCTORS -MCQs
  1. The energy band gap is maximum in

    Text Solution

    |

  2. INTRINSIC SEMICONDUCTORS

    Text Solution

    |

  3. A semiconductor is known to have an electron concentration of 5 xx 10^...

    Text Solution

    |

  4. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  5. which one of the following statements is wrong ?

    Text Solution

    |

  6. In a p-n junction, the thickness of the depletion layer is 10^(-6) m. ...

    Text Solution

    |

  7. What is the current in the following junction diode circuit?

    Text Solution

    |

  8. A p-n junction diode has a forward bias resistance of 10Omega and a re...

    Text Solution

    |

  9. The width of the depletion region in a p-n junction diode is 400 nm an...

    Text Solution

    |

  10. The circuit has two oppositely connected ideal diodes in parallel. Wha...

    Text Solution

    |

  11. State the reason, why GaAs is most commonly used in making of a solar ...

    Text Solution

    |

  12. Avalanche breakdown is due to

    Text Solution

    |

  13. A P-N photodiode is fabricated from a semiconductor with a band gap of...

    Text Solution

    |

  14. What is the current flowing through 1 KOmega restsor in the following...

    Text Solution

    |

  15. For a transistor, beta = 50. Input resistance (Ri) = 200Omega. Output ...

    Text Solution

    |

  16. A transistor is used in common emitter configuration. Given its alpha=...

    Text Solution

    |

  17. If the current gain in CB configuration is 0.96, then the current gain...

    Text Solution

    |

  18. For a transistor the parameter beta=99. The value of the parameter alp...

    Text Solution

    |

  19. The following truth table corresponds to the logic gate |(A,0,0,1,1)...

    Text Solution

    |

  20. The following truth table belongs to which one of the following four g...

    Text Solution

    |