What happens if the amount of reverse bias in a p-n junction diode is gradually increased ?

Explanation

If the reverse bias is increased gradually, the majority carrier electrons of the n-region and majority carrier holes of the p-region move away from the junction of the diode gradually. As a result the thickness of depletion layer on the two sides of the junction goes on increased. Hence although the applied potential difference is increased the current being only due to minority carriers is negligible. If the reverse bias voltage across a p-n junction diode is very high the minority charge carriers get accelerated. Due to their high speed they can knock out electrons from the covalent bonds and in turn produce large reverse current.This phenomenon is the termed as brakdown.