In a transistor the forward bias is aIways smaII as compared to the reverse bias. Why?

Explanation

In a transistor the emitter-base junction is forward biased and the collector-base junction is reverse biased. If the forwed bias is made large the velocity of the majority carriers entering the collector region through the base region would be very large. In addition to this the number of these carriers is also very large. So, the heat produced would be large enough to break up the covalent bonds resulting in permanent damage of the transistor.But if the reverse bias applied to the collector is larger than this forwed bias this would restrict the majority carriers coming from the emitter on reaching the collector with such high speed and thus saving the device from damage.