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The breakdown in a reverse biased p-n ju...

The breakdown in a reverse biased p-n junction is more likely to occur due to the

A

large velocity of the minoriy charge carriers if the doping concentration is small

B

large velocity of the minority carriers if the doping concentration is large

C

strong electric field in a depletion region if the doping concentration is small

D

strong electric field in the depletion region if the doping concentration is large

Text Solution

Verified by Experts

The correct Answer is:
A, D
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