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For in intrinsic semiconductor the energ...

For in intrinsic semiconductor the energy gap of forbidden zone is approximately

A

0.01 eV

B

0.1 eV

C

1 eV

D

10 eV

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The correct Answer is:
C
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CHHAYA PUBLICATION-SEMICONDUCTORS AND ELECTRONICS -EXERCISE (Multiple Choice Questions )
  1. If potential difference is applied the value of electric current

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  2. Two pieces of copper and germanium are cooled from room temperature to...

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  3. For in intrinsic semiconductor the energy gap of forbidden zone is app...

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  4. In a semiconducting material the mobilities of electrons and holes a...

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  5. In some substance charge can flow at ordinary temperature but not at v...

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  6. If a small amount of antimony is added to germanium crystal

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  7. Pure Si at 500 K has equal number of electron (n(e)) and hole (n(h)) c...

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  8. If a p-n junction diode is not connected in a circuit then

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  9. In the circuit shown in Fig 1.54 the forward bias resistances of both ...

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  10. When a p-n diode is reverse biased then

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  11. The current through the given circuit of Fig .1.56.

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  12. The impurity atoms that should be added to germenium to make it n-type...

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  13. The circuit has two oppositely connected ideal diodes in parallel. Wha...

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  14. When a p-n junction is reverse biased then

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  15. A Zener diode having breakdown voltage equal to 15V,is used in a volta...

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  16. If the rate of doping in the emitter base and colletor of a transistor...

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  17. In the active region of a transistor the biasisng at the emitter-base ...

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  18. A transistor is used as

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  19. In an n-p-n transistor circuit collector current is 10 mA. If 90% of e...

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  20. For a transistor if (DeltaI(C))/(DeltaI(E))=0.96 then the current gain...

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