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Pure Si at 500 K has equal number of ele...

Pure Si at 500 K has equal number of electron (`n_(e))` and hole (`n_(h))` concentrations of `1.5 xx10^(16) "m"^(-3)` . Doping by indium increases `n_(h)` to `4.5 xx10^(22) "m" ^(-3)` . The doped semiconductor is of

A

p-type `" "`having `" "`electron `" "`concentration
`n_(e)=5xx10^(9)"m"^(-3)`

B

n-type `" "`having `" "`electron `" "`concentration
`n_(e)=5xx10^(22)"m"^(-3)`

C

p-type `" "`having `" "`electron `" "`concentration
`n_(e)=2.5xx10^(10)"m"^(-3)`

D

n-type `" "`having `" "`electron `" "`concentration
`n_(e)=2.5xx10^(23)"m"^(-3)`

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The correct Answer is:
A
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CHHAYA PUBLICATION-SEMICONDUCTORS AND ELECTRONICS -EXERCISE (Multiple Choice Questions )
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  9. When a p-n diode is reverse biased then

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  10. The current through the given circuit of Fig .1.56.

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  13. When a p-n junction is reverse biased then

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