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A semiconductor has the electron concent...

A semiconductor has the electron concentration of `8 xx 10^(13) "cm"^(-3)` and hole concentration `4xx10^(12) "cm"^(-3)`. Is this semiconductor n-type or p-type ? Also calculate resistivity of its material.
Given : Electron mobility =24000`"cm"^(2). "V"^(-1).s^(-1).` and hole mobility =200 `"cm"^(2)."V"^(-1). s^(-1)`

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The correct Answer is:
n type 3.25 `Omega`.cm
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A semiconductor has the electron concentration of 4xx10^(12) "cm" ^(-3) and the hole concentration of 7xx10^(13)"cm"^(-3) . Is this semiconductor n-type or p-type ? Also calculate conductivity of its material. Given : Electron mobility =22000 "cm"^(2)."V"^(-1).s^(-1) and hole mobility =150 "cm"^(2)."V"^(-1).s^(-1)

A semiconductor has the eIectron concentration 0.45 xx 10^(12) "m"^(-3) and the hoIe concentration 5 xx 10^(20)m^(-3) . CaIcuIate the conductivity of the mate- riaI of this semiconductor. Given, Electron mobiIity =0.135 "m"^(2). V^(-1).s^(-1) and hoIe mobiIity =0.048 "m"^(2). V^(-1). s^(-1) .

Knowledge Check

  • Pure Si at 500 K has equal number of electron ( n_(e)) and hole ( n_(h)) concentrations of 1.5 xx10^(16) "m"^(-3) . Doping by indium increases n_(h) to 4.5 xx10^(22) "m" ^(-3) . The doped semiconductor is of

    A
    p-type `" "`having `" "`electron `" "`concentration
    `n_(e)=5xx10^(9)"m"^(-3)`
    B
    n-type `" "`having `" "`electron `" "`concentration
    `n_(e)=5xx10^(22)"m"^(-3)`
    C
    p-type `" "`having `" "`electron `" "`concentration
    `n_(e)=2.5xx10^(10)"m"^(-3)`
    D
    n-type `" "`having `" "`electron `" "`concentration
    `n_(e)=2.5xx10^(23)"m"^(-3)`

  • After 200s of the initiation of the reaction, 2Ararr4B+(1)/(2)D, the concentration of B is 4xx10^(-2)"mol.L"^(-1) . At the particular time , the rate of the reaction is -

    A
    `10^(-4)"mol.L"^(-1).s^(-1)`
    B
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    C
    `5xx10^(-5)"mol.L"^(-1).s^(-1)`
    D
    `2.5xx10^(-4)"mol.L"^(-1).s^(-1)`

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