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Pure silicon at 300 K has same electron ...

Pure silicon at 300 K has same electron and hole concentrations of `1.5xx10^(16)"m" ^(-3)`. Doping by indium the concentration of holes increases to `4.5 xx10^(22)"m" ^(-3)` . Calculate electron concentration in doped silicon.

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The correct Answer is:
`5xx10^(9) "m"^(-3)`
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