Home
Class 12
PHYSICS
A semiconductor has the electron concent...

A semiconductor has the electron concentration of `4xx10^(12) "cm" ^(-3)` and the hole concentration of `7xx10^(13)"cm"^(-3)`. Is this semiconductor n-type or p-type ?
Also calculate conductivity of its material.
Given : Electron mobility =22000 `"cm"^(2)."V"^(-1).s^(-1)` and hole mobility =150 `"cm"^(2)."V"^(-1).s^(-1)`

Text Solution

Verified by Experts

The correct Answer is:
p type , 1.576 mho. `"m"^(-1)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise Problem Set -I|5 Videos
  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise Problem Set -II (semiconductor)|1 Videos
  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise Short Answer Type Questions -II|5 Videos
  • REFRACTION OF LIGHT

    CHHAYA PUBLICATION|Exercise CBSE SCANNER|11 Videos

Similar Questions

Explore conceptually related problems

A semiconductor has the electron concentration of 8 xx 10^(13) "cm"^(-3) and hole concentration 4xx10^(12) "cm"^(-3) . Is this semiconductor n-type or p-type ? Also calculate resistivity of its material. Given : Electron mobility =24000 "cm"^(2). "V"^(-1).s^(-1). and hole mobility =200 "cm"^(2)."V"^(-1). s^(-1)

A semiconductor has the eIectron concentration 0.45 xx 10^(12) "m"^(-3) and the hoIe concentration 5 xx 10^(20)m^(-3) . CaIcuIate the conductivity of the mate- riaI of this semiconductor. Given, Electron mobiIity =0.135 "m"^(2). V^(-1).s^(-1) and hoIe mobiIity =0.048 "m"^(2). V^(-1). s^(-1) .

Pure silicon at 300 K has same electron and hole concentrations of 1.5xx10^(16)"m" ^(-3) . Doping by indium the concentration of holes increases to 4.5 xx10^(22)"m" ^(-3) . Calculate electron concentration in doped silicon.

Calculate k_a for a dibasic acid if its concentration is 0.05 N and hydrogen ion concentration is 1 xx 10^(-3) mol L^(-1)

Calculate the conductivity of a semiconductor having electron concentration 5xx10^(12)"cm"^(-3) and hole concentration 8xx10^(13)"cm"^(-3) [mu_(e)=2.3"V"^(-1).s^(-1)."m"^(2)" ""and"" " mu_(h)=0.1"V"^(-1).s^(-1)."m"^(2)]

An extrinsic semiconductor has the concentration of holes as charge carriers 5 xx10^(20) "m"^(-3) . The electron concentration is negligible as compared to hole concentration . If mobility of holes is 0.05 "m"^(2)."V"^(-1).s^(-1) then find the conductivity (in mho. "m"^(-1) ) of the semiconductor ?

At a certain temperature, the specific conductance of 0.001 (M) aqueous solution of acetic acid is 5xx10^(-5)"S.cm"^(-1) . At the same temperature, if the molar conductivity of an infinitely dilute aqueous solution of acetic acid is "400 S.cm"^(2)."mol"^(-1) , then -

Pure Si at 500 K has equal number of electron ( n_(e)) and hole ( n_(h)) concentrations of 1.5 xx10^(16) "m"^(-3) . Doping by indium increases n_(h) to 4.5 xx10^(22) "m" ^(-3) . The doped semiconductor is of

In the reaction aArarrbB , when the concentration of A is 2.2xx10^(-3)M the rate is 2.4xx10^(-3)M.s^(-1) and when the concentration of A is halved , the rate becomes 0.6xx10^(-3)M.s^(-1) . For what concentration of A will the rate be 1.8xx10^(-3)M.s^(-1) ?

Calculate the wavelength of an electron moving with a velocity of 2.05xx10^(7)m*s^(-1) .