Home
Class 12
PHYSICS
The barrier potential of a p-n junction ...

The barrier potential of a p-n junction depends on (i) type of semiconductor material (ii) amount of doping and (iii) temperatur e. Which one of the following is correct?

A

(i) and (ii) only

B

(ii) only

C

(ii) and (iii) only

D

(i),(ii) and (iii)

Text Solution

Verified by Experts

The correct Answer is:
D

The barrier potential V of p-n junction diode
(a) is proportional to temperature T.
(b) increases with the increase of number densisty of donor atom and acceptor atom in the two parts of the diode.
( c) decreases with the increase of number densisty (`n_(i))` of the thermal electron and hole of the pure semiconductor. This `n_(i)` depends on the material of the semiconductor.
Doubtnut Promotions Banner Mobile Dark
|

Topper's Solved these Questions

  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise EXAMINATION ARCHIVE with solutions (NEET)|6 Videos
  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise CBSE SCANNER|31 Videos
  • SEMICONDUCTORS AND ELECTRONICS

    CHHAYA PUBLICATION|Exercise EXAMINATION ARCHIVE with solutions (JEE Main)|4 Videos
  • REFRACTION OF LIGHT

    CHHAYA PUBLICATION|Exercise CBSE SCANNER|11 Videos

Similar Questions

Explore conceptually related problems

Mention the type of semiconductor (n-type or p-typr) that is formed when germanium is doped with each of the following elements. (a) Al (b) Sb ( c) B (d) As

If f_i, F_i, F'_i are respectively the frequency less than type cumulative frequency, greater than type cumulative frequency of i-th class and N be the total freqnency then which of the following is correct?

Knowledge Check

  • In double refraction we get two refracted rays, i.e., O-ray and E-ray. Which one of the following statements is correct?

    A
    only O-ray is polarised
    B
    only E-ray is polarised
    C
    both O-ray and E-ray are polarised
    D
    none of the O-ray and E-ray is polarised
  • Wavelengths of microwave, ultraviolet and infrared rays are lambda_m,lambda_n and lambda_i , respectively. Which one of the following is correct?

    A
    `lambda_m gt lambda_n gt lambda_i`
    B
    `lambda_i gt lambda_n gt lambda_m`
    C
    `lambda_n gt lambda_i gt lambda_m `
    D
    `lambda_m gt lambda_i gt lambda_n`
  • Similar Questions

    Explore conceptually related problems

    Following are the two statements regarding the origin of life : i. " " The earliest organisms that appeared on the earth were non-green and presumably anaerobes. ii. " " The first autotrophic organisms were the chemoautotrophs that never relesed oxygen. Of the above statements which one of the following options is correct ? a. (ii) is correct but (i) is false b. Both (i) and (ii) are correct c. Both (i) and (ii) are false d. (i) is correct but (ii) is false

    A student appears for tests I, II and III. The student is considered successful if he passes in tests I, II or III or all the three. The probabilities of the Student passing in tests I,II and III are m, n and 1/2 respectively. If the probability of the student to be successful is 1/2 , then which one of the following is correct? (a) m (1+n)=1 (B) n (1+m) =1 (C) m=1 (D) mn=1

    Read the following matches regarding the placentation : (i) Dianthus - Free central (ii) Cannabis - Marginal (iii) Sunflower - Basal (iv) Cucurbita - Axile Which of these are correct ?

    Go through the following matches (i) Gluteal tuberosity - Tibia (ii) Medial malleolus - Fibula (iii) Greater Trochanter - Femur Which of these are correct?

    What type of semiconductor (n-or p-type) is formed when pure Ge is doped with a trace amount of As, and why?

    What type of semiconductor (n- or p-type) is formed when pure Si is doped with a trace amount of B, and why?